GaAs, at T=300  K, is uniformly doped with acceptor impurity atoms to a concentration of Na=2 ×10^16  cm^-3. Assume an excess carrier lifetime of 5 ×10^-7  s. (a) Determine the electron-hole recombination rate if the excess electron concentration is δn=5 ×10^14  cm^-3 ·(b) Using the results of part (a), what is the lifetime of holes? | Numerade

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Predict whether each of the following elements will act as a donor or an acceptor when added to the indicated semiconducting material. Assume that the impurity elements are substitutional. Impurity Semiconductor N Si B Ge S InSb In CdS As ZnTe | Numerade

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In a p-type semiconductor, the acceptor impurity produces an energy level ______ | Shaalaa.com

View Solution Mark the donar and acceptor energy level with the... | Filo

Semiconductors Class 12 Physics Chapter 14 | JEE Main Important Topics | JEE Exam Preparations